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| savantic semiconductor product specification silicon npn power transistors 2SC2611 d escription with to-126 package high breakdown voltage applications for high voltage amplifier tv video output applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector- base voltage open emitter 300 v v ceo collector- emitter voltage open base 300 v v ebo emitter-base voltage open collector 5 v i c collector current 0.1 a p c collector power dissipation t a =25 1.25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2611 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma;r be = 6 300 v v (br)cbo collector-base breakdown voltage i c =10a; i e =0 300 v v (br)ebo emitter-base breakdown voltage i e =10a; i c =0 5 v v ce ( sat) collector-emitter saturation voltage i c =20ma; i b =2ma 1.5 v i ceo collector cut-off current v ce =250v; r be = 6 1.0 a h fe dc current gain i c =20ma ; v ce =20v 30 200 f t transition frequency i c =20ma ; v ce =20v 50 80 mhz c ob collector output capacitance i e =0 ; v cb =20v;f=1mhz 4.0 pf savantic semiconductor product specification 3 silicon npn power transistors 2SC2611 package outline fig.2 outline dimensions |
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